THEORETICAL CONSIDERATIONS ON THE EFFECTS OF BULK CHARGE ON VMOST CHARACTERISTICS

被引：2

作者：

GREENEICH, EW

机构：

[1] Motorola, Inc., Semiconductor Products Division, Phoenix

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 05期

关键词：

D O I：

10.1109/T-ED.1979.19498

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A linear approximation to the bulk-charge effect in short-channel VMOS devices is presented which allows for an explicit solution to the volt-ampere characteristics in the presence of velocity saturation effects. The results are shown to agree closely with the more complex exact analysis. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：807 / 810

页数：4