ACCURATE EQUIVALENT-CIRCUIT MODEL OF RESONANT TUNNELING DIODES

被引：14

作者：

MILES, RE ^{[1
]}

MILLINGTON, G ^{[1
]}

POLLARD, RD ^{[1
]}

STEENSON, DP ^{[1
]}

CHAMBERLAIN, JM ^{[1
]}

HENINI, M ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 05期

关键词：

MODELING; TUNNEL DIODES;

D O I：

10.1049/el:19910270

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An equivalent circuit model of the resonant tunnelling diode is presented which is derived from measurements over a frequency range from 45 MHz to 12 GHz. The model is valid for a wide range of bias voltages including the region of negative differential resistance and contains elements which, although varying with the applied voltage, do not depend on frequency. The configuration of the model is shown to be a good representation of the processes occurring in the device.

引用

页码：427 / 428

页数：2