SMALL-SIGNAL IMPEDANCE OF GAAS-ALXGA1-XAS RESONANT TUNNELLING HETEROSTRUCTURES AT MICROWAVE FREQUENCY

被引：28

作者：

LIPPENS, D

MOUNAIX, P

机构：

[1] CNRS, Fr, CNRS, Fr

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 18期

关键词：

D O I：

10.1049/el:19880802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES

引用

页码：1180 / 1181

页数：2

共 5 条

[1] FUNDAMENTAL OSCILLATIONS UP TO 200 GHZ IN A RESONANT-TUNNELING DIODE [J].

BROWN, ER ;

SOLLNER, TCLG ;

GOODHUE, WD ;

PARKER, CD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2381-2381

[2] EXPERIMENTAL-STUDY OF THE FREQUENCY LIMITS OF A RESONANT TUNNELING OSCILLATOR [J].

COLEMAN, PD ;

GOEDEKE, S ;

SHEWCHUK, TJ ;

CHAPIN, PC ;

GERING, JM ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :422-424

[3] A SMALL-SIGNAL EQUIVALENT-CIRCUIT MODEL FOR GAAS-ALXGA1-XAS RESONANT TUNNELING HETEROSTRUCTURES AT MICROWAVE-FREQUENCIES [J].

GERING, JM ;

CRIM, DA ;

MORGAN, DG ;

COLEMAN, PD ;

KOPP, W ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :271-276

[4] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J].

HUANG, CI ;

PAULUS, MJ ;

BOZADA, CA ;

DUDLEY, SC ;

EVANS, KR ;

STUTZ, CE ;

JONES, RL ;

CHENEY, ME .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :121-123

[5]

LURYI S, 1987, HETEROJUNCTION BAND

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