Scaling of negative magnetoresistance and extraordinary Hall effect in CaVO3-delta

We have investigated the detailed temperature- and magnetic field dependence of magnetoresistance and Hall resistance in single-crystal CaVO3-delta (delta similar to 0.2). We have found that the low-temperature magnetoresistance and extraordinary contribution to the Hall resistance are both expressed well in terms of a Brillouin function B-J[g J mu(B) H/k(B) (T - Theta)], Theta = - 2 K. From the magnetization vs magnetic field data, it may be deduced that 4% of vanadium ions have a localized magnetic moment of S = 3/2 or that 6% have S = 1. However a resistance minimum (the Kondo effect) was not observed in this system and its possible reasons are discussed.