TIME-RESOLVED X-RAY-DIFFRACTION FROM A SILICON CRYSTAL IRRADIATED BY A Q-SWITCHED ND-YAG LASER

被引:3
作者
KOJIMA, S
KAWADO, S
ISHIKAWA, T
TAKAHASHI, T
KIKUTA, S
机构
[1] NATL LAB HIGH ENERGY PHYS, PHOTON FACTORY, TSUKUBA, IBARAKI 305, JAPAN
[2] UNIV TOKYO, INST SOLID STATE PHYS, MINATO KU, TOKYO 106, JAPAN
[3] UNIV TOKYO, FAC ENGN, DEPT APPL PHYS, BUNKYO KU, TOKYO 113, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 08期
关键词
D O I
10.1143/JJAP.27.L1377
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L1377 / L1379
页数:3
相关论文
共 8 条
[1]   PERFECT-CRYSTAL MONOCHROMATORS FOR SYNCHROTRON X-RADIATION [J].
BONSE, U ;
MATERLIK, G ;
SCHRODER, W .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1976, 9 (JUN1) :223-230
[2]  
KAWADO S, 1987, KEK1987 PHOT FACT AC, P360
[3]   Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation [J].
Larson, B. C. ;
Tischler, J. Z. ;
Mills, D. M. .
JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) :144-154
[4]   SYNCHROTRON X-RAY-DIFFRACTION STUDY OF SILICON DURING PULSED-LASER ANNEALING [J].
LARSON, BC ;
WHITE, CW ;
NOGGLE, TS ;
MILLS, D .
PHYSICAL REVIEW LETTERS, 1982, 48 (05) :337-340
[5]   TIME RESOLVED MEASUREMENTS DURING PULSED LASER IRRADIATION OF SILICON [J].
LOWNDES, DH ;
JELLISON, GE .
SEMICONDUCTORS AND SEMIMETALS, 1984, 23 (0C) :313-404
[6]   TIME-RESOLVED X-RAY-DIFFRACTION FROM SILICON DURING PULSED LASER ANNEALING [J].
LUNNEY, JG ;
DOBSON, PJ ;
HARES, JD ;
TABATABAEI, SD ;
EASON, RW .
OPTICS COMMUNICATIONS, 1986, 58 (04) :269-272
[7]  
TAKAHASHI T, 1986, XRAY INSTRUMENTATION, P137
[8]   SHOCK LAUNCHING IN SILICON STUDIED WITH USE OF PULSED X-RAY-DIFFRACTION [J].
WARK, JS ;
WHITLOCK, RR ;
HAUER, A ;
SWAIN, JE ;
SOLONE, PJ .
PHYSICAL REVIEW B, 1987, 35 (17) :9391-9394