TIME-RESOLVED X-RAY-DIFFRACTION FROM SILICON DURING PULSED LASER ANNEALING

被引：28

作者：

LUNNEY, JG

DOBSON, PJ

HARES, JD

TABATABAEI, SD

EASON, RW

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,BLACKETT LAB,LONDON SW7 2BZ,ENGLAND

[2] UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND

来源：

OPTICS COMMUNICATIONS | 1986年 / 58卷 / 04期

关键词：

HEAT TREATMENT - Laser Applications - LASER BEAMS - Applications - LASER PULSES - Applications - SILICON AND ALLOYS - Heat Treatment;

D O I：

10.1016/0030-4018(86)90448-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The pulsed X-ray line emission at 4. 44 A from a laser produced plasma has been used to make time-resolved X-ray diffraction measurements on silicon during pulsed laser annealing. This was done by varying the time delay between the annealing and plasma producing laser pulses. Preliminary results show that this technique is well suited to the study of laser heated crystals and is capable of giving single shot recording of the thermal strain profile with nanosecond time resolution.

引用

页码：269 / 272

页数：4

共 7 条

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LARSON, BC
WHITE, CW
NOGGLE, TS
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MILLS, DM
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 282 - 284
[5] X-RAY STUDY OF LATTICE STRAIN IN BORON IMPLANTED LASER ANNEALED SILICON
LARSON, BC
BARHORST, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3181 - 3185
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