GROWTH BY TRAVELING HEATER METHOD AND CHARACTERISTIC OF UNDOPED HIGH-RESISTIVITY CDTE

被引：24

作者：

TAGUCHI, T

SHIRAFUJI, J

INUISHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 08期

关键词：

D O I：

10.1143/JJAP.17.1331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1331 / 1342

页数：12

共 28 条

[1]

AGRINSKAYA NV, 1971, SOV PHYS SEMICOND+, V5, P762

[2]

Bell R. O., 1970, Physica Status Solidi A, V1, P375, DOI 10.1002/pssa.19700010303

[3]

BELL RO, 1975, J CRYST GROWTH, V30, P29

[4]

DABROWSKI AJ, 1976, IEEE T NUCL SCI, V23, P171, DOI 10.1109/TNS.1976.4328232

[5] TE INCLUSIONS IN CDTE GROWN FROM A SLOWLY COOLED TE SOLUTION AND BY TRAVELING SOLVENT METHOD [J].

DINGER, RJ ;

FOWLER, IL .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :135-139

[6]

FREGOLLE B, 1974, SOLID STATE COMMUN, V14, P1237

[7] DETERMINATION AND CHARACTERIZATION OF DEEP LEVELS IN P-CDTE(C1) [J].

HOSCHL, P ;

POLIVKA, P ;

PROSSER, V ;

VANECEK, M ;

SKRIVANKOVA, M .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :229-233

[8] THE USE OF A METASTABLE PHASE IN THIN ALLOY ZONE CRYSTALLIZATION [J].

HURLE, DTJ ;

MULLIN, JB ;

PIKE, ER .

SOLID STATE COMMUNICATIONS, 1964, 2 (07) :197-199

[9]

JOYCE BA, 1975, CRYSTAL GROWTH, P157

[10] GROWTH OF CADMIUM TELLURIDE BY SOLVENT EVAPORATION [J].

LUNN, B ;

BETTRIDGE, V .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :151-154

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