GROWTH BY TRAVELING HEATER METHOD AND CHARACTERISTIC OF UNDOPED HIGH-RESISTIVITY CDTE

被引：24

作者：

TAGUCHI, T

SHIRAFUJI, J

INUISHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 08期

关键词：

D O I：

10.1143/JJAP.17.1331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1331 / 1342

页数：12

共 28 条

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[20] HIGH-PURITY CDTE SINGLE-CRYSTALS GROWN FROM SOLUTIONS [J].

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