HIGH-PURITY CDTE SINGLE-CRYSTALS GROWN FROM SOLUTIONS

被引:29
作者
TAGUCHI, T [1 ]
SHIRAFUJI, J [1 ]
INUISHI, Y [1 ]
机构
[1] OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
关键词
D O I
10.1143/JJAP.13.1169
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1169 / 1170
页数:2
相关论文
共 5 条
[1]  
BELL RP, TO BE PUBLISHED
[2]   A NEW METHOD OF GAP GROWTH [J].
BRODER, JD ;
WOLFF, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) :1150-1153
[3]  
TAGUCHI T, 1973, JPN J APPL PHYS, V12, P1558, DOI 10.1143/JJAP.12.1558
[4]   ANNEALING BEHAVIOR OF DEFECTS IN ELECTRON-IRRADIATED RHO-TYPE CDTE [J].
TAGUCHI, T ;
SHIRAFUJI, J ;
INUISHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (06) :1003-1004
[5]  
TAGUCHI T, TO BE PUBLISHED