PHOTO-MOCVD OF PBTIO3 THIN-FILMS

PbTiO3 thin films were deposited onto (0001) sapphire using the photo-MOCVD method. Tetraethyl lead (Pb(C2H5)4) and titanium tetraisopropoxide (Ti(i-OC3H7)4) were used as a Pb and a Ti source, respectively. In this study, NO2 was used as an oxidizing gas. The structural nature and growth rate of PbTiO3 films depended on the substrate temperature, the flow rate of NO2 gas and photo-irradiation. When the photo-irradiation was present during the growth run, perovskite PbTiO3 films were successfully grown at substrate temperatures above 530-degrees-C. The dependence of the structural nature of the films on the irradiated light wavelength showed that the photochemical processes including the photolysis of NO2 effected the low temperature growth of PbTiO3. The photo-deposited films showed higher growth rates than films obtained using the thermal MOCVD method at substrate temperatures below 550-degrees-C. The electrical properties of the obtained films were also measured.