CAPACITANCE TRANSIENT SPECTRA OF PROCESSING-INDUCED AND RADIATION-INDUCED DEFECTS IN SILICON SOLAR-CELLS

被引：3

作者：

SCHOTT, JT

DEANGELIS, HM

DREVINSKY, PJ

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 02期

关键词：

D O I：

10.1007/BF02670858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：419 / 434

页数：16

共 13 条

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[5]

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[8] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

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[9] DEFECT ENERGY-LEVELS IN BORON-DOPED SILICON IRRADIATED WITH 1-MEV ELECTRONS [J].

MOONEY, PM ;

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[10]

SCHOTT JT, 1976, AFCRLTR760024

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