DEFECT ENERGY-LEVELS IN BORON-DOPED SILICON IRRADIATED WITH 1-MEV ELECTRONS

被引：271

作者：

MOONEY, PM

CHENG, LJ

SULI, M

GERSON, JD

CORBETT, JW

机构：

[1] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

[2] SUNY ALBANY,INST STUDY DEFECTS SOLIDS,ALBANY,NY 12222

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.15.3836

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3836 / 3843

页数：8

共 28 条

[1] ELECTRON PARAMAGNETIC RESONANCE AND ELECTRICAL PROPERTIES OF DOMINANT PARAMAGNETIC DEFECT IN ELECTRON-IRRADIATED P-TYPE SILICON
ALMELEH, N
GOLDSTEIN, B
[J]. PHYSICAL REVIEW, 1966, 149 (02): : 687 - +
[2] ELECTRON-IRRADIATION DAMAGE IN SILICON CONTAINING HIGH-CONCENTRATIONS OF BORON
BEAN, AR
MORRISON, SR
SMITH, RS
NEWMAN, RC
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (04): : 379 - &
[3] EPR OF A [001] SI INTERSTITIAL COMPLEX IN IRRADIATED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW B, 1976, 14 (03): : 872 - 883
[4] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS
CHERKI, M
KALMA, AH
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 647 - &
[5] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON
CORBETT, JW
WATKINS, GD
[J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &
[6] GALKIN GN, 1961, SOV PHYS-SOL STATE, V2, P1819
[7] RECOMBINATION IN GAMMA-IRRADIATED SILICON
GLAENZER, RH
WOLF, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) : 2197 - &
[8] GREGORY BL, 1971, SCM710887 SAND LAB R
[9] John Lee Y., COMMUNICATION
[10] NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS
KIMERLING, LC
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1497 - 1505