NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS

被引：155

作者：

KIMERLING, LC ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/TNS.1976.4328529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1497 / 1505

页数：9

共 49 条

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[9] REDUCED DEGRADATION IN INXGA1-XAS ELECTROLUMINESCENT DIODES [J].

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