HOT-FILAMENT-GROWN DIAMOND FILMS ON SI - CHARACTERIZATION OF IMPURITIES

被引：16

作者：

HINNEBERG, HJ ^{[1
]}

ECK, M ^{[1
]}

SCHMIDT, K ^{[1
]}

机构：

[1] KFA JULICH GMBH, FORSCHUNGSZENTRUM, INST SCHICHT & IONENTECH, W-5170 JULICH 1, GERMANY

来源：

关键词：

D O I：

10.1016/0925-9635(92)90105-W

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metallic contamination in hot-filament-grown diamond films was investigated by Rutherford backscattering spectrometry. Tungsten contamination from 1 to 300 ppm was measured in films deposited while using a tungsten filament. This contamination clearly depends on the filament temperature. Similar experiments with a tantalum filament showed tantalum contamination which was about one order of magnitude higher. The investigated diamond films were polycrystalline, homogeneous and well faceted, as shown by scanning electron microscopy. Their structural quality was demonstrated using Raman spectroscopy. © 1992.

引用

页码：810 / 813

页数：4