ELECTRICAL-PROPERTIES OF SELECTIVELY GROWN HOMOEPITAXIAL DIAMOND FILMS

被引：48

作者：

GROT, SA ^{[1
]}

HATFIELD, CW ^{[1
]}

GILDENBLAT, GS ^{[1
]}

BADZIAN, AR ^{[1
]}

BADZIAN, T ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 14期

关键词：

D O I：

10.1063/1.105172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron-doped homoepitaxial diamond films were selectively grown using sputtered SiO2 as a masking material. Uniform thickness, down to 50 nm, over a large area can be achieved with this technique. Hall mobility of selectively grown films is comparable to that of high-pressure high-temperature synthetic bulk diamond with a corresponding carrier concentration.

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页码：1542 / 1544

页数：3

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