BAND-STRUCTURE EFFECTS IN INTERBAND TUNNEL DEVICES

被引：8

作者：

TING, DZY

YU, ET

MCGILL, TC

机构：

[1] Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, 91125, CA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.585711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a calculation of transport in InAs/GaSb/AlSb-based interband tunnel structures using a realistic band structure model. The results are compared with calculations using a two-band model which includes only the lowest conduction band and the light-hole band. We find that for device structures containing GaSb quantum wells, the inclusion of heavy-hole states can introduce additional transmission resonances and substantial hole-mixing effects. These effects are found to have a significant influence on the current-voltage characteristics of interband devices.

引用

页码：2405 / 2410

页数：6

共 26 条

[1]

[Anonymous], 1966, SEMICONDUCTORS SEMIM

[2] INTERBAND TUNNELING IN SINGLE-BARRIER INAS/AISB/GASB HETEROSTRUCTURES [J].

BERESFORD, R ;

LUO, LF ;

LONGENBACH, KF ;

WANG, WI .

APPLIED PHYSICS LETTERS, 1990, 56 (10) :952-954

[3] RESONANT INTERBAND TUNNELING THROUGH A 110 NM INAS QUANTUM WELL [J].

BERESFORD, R ;

LUO, LF ;

LONGENBACH, KF ;

WANG, WI .

APPLIED PHYSICS LETTERS, 1990, 56 (06) :551-553

[4] BOND-ORBITAL MODELS FOR SUPERLATTICES [J].

CHANG, YC .

PHYSICAL REVIEW B, 1988, 37 (14) :8215-8222

[5]

Collins D.A., 1990, 1990 IEEE INT EL DEV, V945

[6] EXPERIMENTAL-OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE FROM AN INAS/GASB INTERFACE [J].

COLLINS, DA ;

YU, ET ;

RAJAKARUNANAYAKE, Y ;

SODERSTROM, JR ;

TING, DZY ;

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1990, 57 (07) :683-685

[7]

DUKE CB, 1969, TUNNELING SOLIDS, V10

[8]

FRENSLEY WR, COMMUNICATION

[9]

GAULTIERI GJ, 1986, APPL PHYS LETT, V49, P1037

[10]

GAULTIERI GJ, 1987, J APPL PHYS, V61, P5337

← 1 2 3 →