INTERBAND TUNNELING IN SINGLE-BARRIER INAS/AISB/GASB HETEROSTRUCTURES

被引：40

作者：

BERESFORD, R ^{[1
]}

LUO, LF ^{[1
]}

LONGENBACH, KF ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.102634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Negative differential resistance due to interband tunneling has been observed at room temperatures for the first time in polytype heterostructures of InAs/AlSb/GaSb. The peak-to-valley ratio is about 1.7:1 (5.5:1 at 77 K) for an AlSb barrier width of 2.5 nm. The peak current density is studied as a function of barrier width and compared to calculations based on the two-band model.

引用

页码：952 / 954

页数：3

共 18 条

[1] RESONANT TUNNELING OF HOLES IN ALSB GASB ALSB DOUBLE-BARRIER HETEROSTRUCTURES
BERESFORD, R
LUO, LF
WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (07) : 694 - 695
[2] NEGATIVE DIFFERENTIAL RESISTANCE IN ALGASB/INAS SINGLE-BARRIER HETEROSTRUCTURES AT ROOM-TEMPERATURE
BERESFORD, R
LUO, LF
WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1899 - 1901
[3] RESONANT TUNNELING THROUGH X-VALLEY STATES IN GAAS/AIAS/GAAS SINGLE-BARRIER HETEROSTRUCTURES
BERESFORD, R
LUO, LF
WANG, WI
MENDEZ, EE
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (15) : 1555 - 1557
[4] ELECTRONIC-PROPERTIES OF INAS-GASB SUPER-LATTICES
CHANG, LL
ESAKI, L
[J]. SURFACE SCIENCE, 1980, 98 (1-3) : 70 - 89
[5] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[6] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES
CHO, AY
[J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317
[7] OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE FROM A SINGLE BARRIER HETEROSTRUCTURE
CHOW, DH
MCGILL, TC
SOU, IK
FAURIE, JP
NIEH, CW
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (01) : 54 - 56
[8] TRANSPORT IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
GOLDMAN, VJ
TSUI, DC
CUNNINGHAM, JE
TSANG, WT
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2693 - 2695
[9] X-RAY PHOTOEMISSION CORE LEVEL DETERMINATION OF THE GASB/ALSB HETEROJUNCTION VALENCE-BAND DISCONTINUITY
GUALTIERI, GJ
SCHWARTZ, GP
NUZZO, RG
SUNDER, WA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1037 - 1039
[10] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO
HUANG, CI
PAULUS, MJ
BOZADA, CA
DUDLEY, SC
EVANS, KR
STUTZ, CE
JONES, RL
CHENEY, ME
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 121 - 123

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