RESONANT TUNNELING OF HOLES IN ALSB GASB ALSB DOUBLE-BARRIER HETEROSTRUCTURES

被引：25

作者：

BERESFORD, R ^{[1
]}

LUO, LF ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 07期

关键词：

D O I：

10.1063/1.101801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：694 / 695

页数：2

共 18 条

[1] EFFECTIVE MASSES OF HOLES AT GAAS-ALGAAS HETEROJUNCTIONS
BROIDO, DA
SHAM, LJ
[J]. PHYSICAL REVIEW B, 1985, 31 (02): : 888 - 892
[2] Capasso F., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V792, P10, DOI 10.1117/12.940815
[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[4] MODIFICATION OF OPTICAL-PROPERTIES OF GAAS-GA1-XALXAS SUPER-LATTICES DUE TO BAND MIXING
CHANG, YC
SCHULMAN, JN
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 536 - 538
[5] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES
CHO, AY
[J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317
[6] CALCULATION OF HOLE SUBBANDS AT THE GAAS-ALXGA1-XAS INTERFACE
EKENBERG, U
ALTARELLI, M
[J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3569 - 3570
[7] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS
GOODHUE, WD
SOLLNER, TCLG
LE, HQ
BROWN, ER
VOJAK, BA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1086 - 1088
[8] X-RAY PHOTOEMISSION CORE LEVEL DETERMINATION OF THE GASB/ALSB HETEROJUNCTION VALENCE-BAND DISCONTINUITY
GUALTIERI, GJ
SCHWARTZ, GP
NUZZO, RG
SUNDER, WA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1037 - 1039
[9] RESONANT TUNNELING IN ALSB/INAS/ALSB DOUBLE-BARRIER HETEROSTRUCTURES
LUO, LF
BERESFORD, R
WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (23) : 2320 - 2322
[10] SCHOTTKY BARRIERS ON COMPOUND SEMICONDUCTORS - ROLE OF ANION
MCCALDIN, JO
MCGILL, TC
MEAD, CA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 802 - 806

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