RESONANT TUNNELING IN ALSB/INAS/ALSB DOUBLE-BARRIER HETEROSTRUCTURES

被引：72

作者：

LUO, LF ^{[1
]}

BERESFORD, R ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 23期

关键词：

D O I：

10.1063/1.100266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2320 / 2322

页数：3

共 14 条

[1] HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS
ASBECK, PM
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) : 2571 - 2579
[2] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890
[3] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE
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KIEHL, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368
[4] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
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[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[5] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES
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[J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317
[6] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1826 - 1828
[7] FREQUENCY AND POWER LIMIT OF QUANTUM-WELL OSCILLATORS
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 1003 - 1005
[8] DEPENDENCE OF TUNNELING CURRENT ON STRUCTURAL VARIATIONS OF SUPERLATTICE DEVICES
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (02) : 167 - 168
[9] ROOM-TEMPERATURE OPERATION OF HOT-ELECTRON TRANSISTORS
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 984 - 986
[10] BAND LINEUPS AT THE GASB-ALXGA1-XSB HETERO-JUNCTION - EXPERIMENTAL-EVIDENCE FOR A NEW COMMON ANION RULE
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[J]. SOLID STATE COMMUNICATIONS, 1987, 61 (11) : 703 - 706

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