ROOM-TEMPERATURE OPERATION OF HOT-ELECTRON TRANSISTORS

被引：91

作者：

LEVI, AFJ ^{[1
]}

CHIU, TH ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期

关键词：

D O I：

10.1063/1.98784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：984 / 986

页数：3

相关论文

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[6] INGAAS-INALGAAS HOT-ELECTRON TRANSISTORS WITH CURRENT GAIN OF 15
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[7] CORRECTION
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1312 - 1312
[8] LEVI AFJ, 1986, APPL PHYS, V48, P1690
[9] MADELUNG O, 1982, LANDOLTBORNSTEIN TAB, V3
[10] THEORY OF THE HOLE SUBBAND DISPERSION IN STRAINED AND UNSTRAINED QUANTUM-WELLS
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