INGAAS-INALGAAS HOT-ELECTRON TRANSISTORS WITH CURRENT GAIN OF 15

被引:19
作者
IMAMURA, K
MUTO, S
FUJII, T
YOKOYAMA, N
HIYAMIZU, S
SHIBATOMI, A
机构
关键词
D O I
10.1049/el:19860787
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:1148 / 1150
页数:3
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共 8 条
  • [1] MEASUREMENT OF THE GAMMA-L SEPARATION IN GA-0.47IN-0.53 AS BY ULTRAVIOLET PHOTOEMISSION
    CHENG, KY
    CHO, AY
    CHRISTMAN, SB
    PEARSALL, TP
    ROWE, JE
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 423 - 425
  • [2] MBE GROWTH OF INGAALAS LATTICE-MATCHED TO INP BY PULSED MOLECULAR-BEAM METHOD
    FUJII, T
    NAKATA, Y
    SUGIYAMA, Y
    HIYAMIZU, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (03): : L254 - L256
  • [3] HASE I, 1985, 12TH P INT S GAAS RE, P613
  • [4] HEIBLUM H, 1985, P MSS, V2, P610
  • [5] MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT EFFICIENCY OF AN INGAAS INP HOT-ELECTRON TRANSISTOR
    OHNISHI, H
    YOKOYAMA, N
    NISHI, H
    [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) : 403 - 404
  • [6] INGAAS/INALAS HOT-ELECTRON TRANSISTOR
    REDDY, UK
    CHEN, J
    PENG, CK
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (26) : 1799 - 1801
  • [7] SUGIYAMA Y, UNPUB JPN J APPL PHY
  • [8] Yokoyama N., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P532