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MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT EFFICIENCY OF AN INGAAS INP HOT-ELECTRON TRANSISTOR

被引：8
作者：
OHNISHI, H
YOKOYAMA, N
NISHI, H
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 08期
关键词：
D O I：
10.1109/EDL.1985.26170
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：403 / 404
页数：2
相关论文
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[6]  
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