NEGATIVE DIFFERENTIAL RESISTANCE IN ALGASB/INAS SINGLE-BARRIER HETEROSTRUCTURES AT ROOM-TEMPERATURE

被引：43

作者：

BERESFORD, R ^{[1
]}

LUO, LF ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 19期

关键词：

D O I：

10.1063/1.101235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1899 / 1901

页数：3

共 15 条

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[2] NEGATIVE DIFFERENTIAL RESISTANCES FROM HG1-XCDX TE-CDTE SINGLE QUANTUM BARRIER HETEROSTRUCTURES
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[3] OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE FROM A SINGLE BARRIER HETEROSTRUCTURE
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[4] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS
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[5] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS
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LE, HQ
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1086 - 1088
[6] X-RAY PHOTOEMISSION CORE LEVEL DETERMINATION OF THE GASB/ALSB HETEROJUNCTION VALENCE-BAND DISCONTINUITY
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SUNDER, WA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1037 - 1039
[7] TUNNELING THROUGH NARROW-GAP SEMICONDUCTOR BARRIERS
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 644 - 646
[8] RESONANT TUNNELING IN ALSB/INAS/ALSB DOUBLE-BARRIER HETEROSTRUCTURES
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WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (23) : 2320 - 2322
[9] INELASTIC TUNNELING IN ALAS-GAAS-ALAS HETEROSTRUCTURES
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CALLEJA, E
WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (11) : 977 - 979
[10] BAND LINEUPS AT THE GASB-ALXGA1-XSB HETERO-JUNCTION - EXPERIMENTAL-EVIDENCE FOR A NEW COMMON ANION RULE
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[J]. SOLID STATE COMMUNICATIONS, 1987, 61 (11) : 703 - 706

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