THIN-FILM GROWTH BY AGGREGATION OF CARBON IMPLANTED INTO COPPER-CRYSTALS

被引：7

作者：

LAU, WM

BELLO, I

HUANG, LJ

LEE, ST

CHEN, S

BRAUNSTEIN, G

机构：

[1] UNIV WESTERN ONTARIO, LONDON N6A 5B7, ONTARIO, CANADA

[2] EASTMAN KODAK CO, CORP RES LABS, ROCHESTER, NY 14650 USA

来源：

关键词：

D O I：

10.1016/0925-9635(92)90200-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon films have been prepared on copper crystals by implantation of carbon at 50-390 keV and at implantation temperatures of 25-100 °C. In order to determine the orientation dependence, Cu (100), (110), (111) and (210) crystals were used. Film characterization was carried out with X-ray diffraction, transmission electron diffraction, Raman microprobe analysis, and X-ray photoelectron spectroscopy. Samples implanted at or below 400°C were subjected to either rapid thermal annealing or pulsed laser annealing. Carbon overlayers on copper were found in all cases. However, (0001) graphite was identified to be the main product and no diamond formation was observed. © 1992.

引用

页码：735 / 740

页数：6

共 19 条

[1] LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].