THERMOCHEMISTRY ON THE HYDROGENATED DIAMOND(111) SURFACE

被引:43
作者
HARRIS, SJ
BELTON, DN
BLINT, RJ
机构
[1] Physical Chemistry Department, General Motors Research Labs, Warren
关键词
D O I
10.1063/1.349379
中图分类号
O59 [应用物理学];
学科分类号
摘要
As part of our effort to control the growth of diamond films by chemical vapor deposition, we are studying the chemical mechanism for conversion of gas phase hydrocarbons into diamond. In this work we analyze the thermochemistry of a number of structures on the hydrogenated diamond (111) surface. We use the MM2 molecular mechanics force field to calculate strain energies, which are due to crowding of adsorbed species on the surface, and we use a group additivity scheme to estimate bond enthalpies and entropies. These data allow calculation of equilibrium structures on the surface and, together with estimates for rate constants, will permit a prediction for the kinetics of diamond formation as a function of growth conditions. We find that a straightforward abstraction/addition mechanism using either CH3 or C2H2 to grow on a hydrogenated (111) surface cannot account for experimentally measured growth rates. We suggest that experimental measurements of growth rates on (111) surfaces are strongly influenced by growth at steps, kinks, and edges on those surfaces.
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页码:2654 / 2659
页数:6
相关论文
共 33 条
[1]   CONFORMATIONAL-ANALYSIS .130. MM2 - HYDROCARBON FORCE-FIELD UTILIZING V1 AND V2 TORSIONAL TERMS [J].
ALLINGER, NL .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (25) :8127-8134
[2]   RATE CONSTANTS FOR THE GAS-PHASE REACTIONS OF OH RADICALS WITH A SERIES OF BICYCLOALKANES AND TRICYCLOALKANES AT 299 +/- 2 K - EFFECTS OF RING STRAIN [J].
ATKINSON, R ;
ASCHMANN, SM ;
CARTER, WPL .
INTERNATIONAL JOURNAL OF CHEMICAL KINETICS, 1983, 15 (01) :37-50
[3]   INSITU CHARACTERIZATION OF DIAMOND NUCLEATION AND GROWTH [J].
BELTON, DN ;
HARRIS, SJ ;
SCHMIEG, SJ ;
WEINER, AM ;
PERRY, TA .
APPLIED PHYSICS LETTERS, 1989, 54 (05) :416-418
[4]   LOSS OF EPITAXY DURING DIAMOND FILM GROWTH ON ORDERED NI(100) [J].
BELTON, DN ;
SCHMIEG, SJ .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) :4223-4229
[5]  
Benson, 1976, THERMOCHEMICAL KINET, V23, P613
[6]   EMPIRICAL POTENTIAL FOR HYDROCARBONS FOR USE IN SIMULATING THE CHEMICAL VAPOR-DEPOSITION OF DIAMOND FILMS [J].
BRENNER, DW .
PHYSICAL REVIEW B, 1990, 42 (15) :9458-9471
[7]   INFRARED DETECTION OF GASEOUS SPECIES DURING THE FILAMENT-ASSISTED GROWTH OF DIAMOND [J].
CELII, FG ;
PEHRSSON, PE ;
WANG, HT ;
BUTLER, JE .
APPLIED PHYSICS LETTERS, 1988, 52 (24) :2043-2045
[8]   MECHANISM OF DIAMOND FILM GROWTH BY HOT-FILAMENT CVD - C-13 STUDIES [J].
CHU, CJ ;
DEVELYN, MP ;
HAUGE, RH ;
MARGRAVE, JL .
JOURNAL OF MATERIALS RESEARCH, 1990, 5 (11) :2405-2413
[9]   GROUND-STATES OF MOLECULES .38. MNDO METHOD - APPROXIMATIONS AND PARAMETERS [J].
DEWAR, MJS ;
THIEL, W .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (15) :4899-4907
[10]   1ST-PRINCIPLES, GENERAL-POTENTIAL LOCAL-ORBITAL CALCULATIONS FOR BULK CRYSTALS [J].
ERWIN, SC ;
PEDERSON, MR ;
PICKETT, WE .
PHYSICAL REVIEW B, 1990, 41 (15) :10437-10446