GROWTH OF CEO2 THIN-FILMS BY LASER ABLATION

被引：1

作者：

AMIRHAGHI, S ^{[1
]}

BEECH, F ^{[1
]}

VICKERS, M ^{[1
]}

BARNES, P ^{[1
]}

TARLING, S ^{[1
]}

BOYD, IW ^{[1
]}

机构：

[1] UNIV LONDON BIRKBECK COLL,DEPT CRYSTALLOG,LONDON WC1E 7HX,ENGLAND

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 25期

关键词：

THIN FILMS; LASER APPLICATIONS; SUPERCONDUCTORS;

D O I：

10.1049/el:19911427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of CeO2 have been grown in situ on silicon (111) and silicon (100) by laser ablation. Results from X-ray diffraction theta-2-theta scans indicate that both the substrate temperature and the oxygen partial pressure are crucial in promoting growth in the preferential [111] direction.

引用

页码：2304 / 2305

页数：2

共 4 条

[1] AMIRHAGHI S, IN PRESS APPL SURF S
[2] Y-BA-CU-O THIN-FILM ON SI SUBSTRATE
HARADA, K
FUJIMORI, N
YAZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1524 - L1526
[3] CERAMIC LAYER EPITAXY BY PULSED LASER DEPOSITION IN AN ULTRAHIGH-VACUUM SYSTEM
KOINUMA, H
NAGATA, H
TSUKAHARA, T
GONDA, S
YOSHIMOTO, M
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (18) : 2027 - 2029
[4] EPITAXIAL CEO2 FILMS AS BUFFER LAYERS FOR HIGH-TEMPERATURE SUPERCONDUCTING THIN-FILMS
WU, XD
DYE, RC
MUENCHAUSEN, RE
FOLTYN, SR
MALEY, M
ROLLETT, AD
GARCIA, AR
NOGAR, NS
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (19) : 2165 - 2167

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