ANISOTROPIC STRUCTURAL, ELECTRONIC, AND OPTICAL-PROPERTIES OF INGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SUBSTRATES

被引：18

作者：

GOLDMAN, RS ^{[1
]}

WIEDER, HH ^{[1
]}

KAVANAGH, KL ^{[1
]}

RAMMOHAN, K ^{[1
]}

RICH, DH ^{[1
]}

机构：

[1] UNIV SO CALIF, DEPT MAT SCI & ENGN, PHOTON MAT & DEVICES LAB, LOS ANGELES, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.112071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the structural, electronic, and optical properties of partially strain-relaxed InxGa1-xAs layers, grown by molecular beam epitaxy on both misoriented and nominally flat (001) GaAs substrates. We find large anisotropies in bulk strain relaxation, interfacial misfit dislocation density, dark-line defect density, and electron mobility, as well as a polarization anisotropy in cathodoluminescence for epilayers grown on misoriented substrates, in comparison with those grown on flat substrates.

引用

页码：1424 / 1426

页数：3