DRIFT AND DIFFUSION OF CHARGE-CARRIERS IN SILICON AND THEIR EMPIRICAL RELATION TO THE ELECTRIC-FIELD

被引：32

作者：

OMAR, MA ^{[1
]}

REGGIANI, L ^{[1
]}

机构：

[1] UNIV MODENA,DEPARTIMENTO FIS,I-41100 MODENA,ITALY

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 07期

关键词：

D O I：

10.1016/0038-1101(87)90106-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：693 / 697

页数：5

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CONWELL EM, 1967, SOLID STATE PHYSIC S, V9

[8] LATTICE-SCATTERING OHMIC MOBILITY OF ELECTRONS IN SILICON [J].

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[9]

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