INTERACTIONS OF DISLOCATIONS IN GAAS GROWN ON SI SUBSTRATES WITH INGAAS-GAASP STRAINED LAYERED SUPERLATTICES

被引：66

作者：

ELMASRY, NA

TARN, JC

KARAM, NH

机构：

来源：

关键词：

D O I：

10.1063/1.341409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3672 / 3677

页数：6

共 7 条

[1] El-Masry N., 1987, MATERIAL RES SOC S P, V91, P99, DOI 10.1557/PROC-91-99
[2] EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES
ELMASRY, N
TARN, JCL
HUMPHREYS, TP
HAMAGUCHI, N
KARAM, NH
BEDAIR, SM
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1608 - 1610
[3] HAMAGUCHI N, 1987, MATER RES SOC S P, V102, P541
[4] DAMAGE OF COHERENT MULTILAYER STRUCTURES BY INJECTION OF DISLOCATIONS OR CRACKS
HIRTH, JP
EVANS, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2372 - 2376
[5] MOLECULAR STREAM EPITAXY OF ULTRATHIN INGAAS/GAASP SUPERLATTICES
KATSUYAMA, T
TISCHLER, MA
KARAM, NH
ELMASRY, N
BEDAIR, SM
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 529 - 531
[6] Lee J.W., 1987, MATER RES SOC S P, V91, P33
[7] MATHEWS JW, 1974, J CRYST GROWTH, V27, P118