EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES

被引：47

作者：

ELMASRY, N ^{[1
]}

TARN, JCL ^{[1
]}

HUMPHREYS, TP ^{[1
]}

HAMAGUCHI, N ^{[1
]}

KARAM, NH ^{[1
]}

BEDAIR, SM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 20期

关键词：

D O I：

10.1063/1.98570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1608 / 1610

页数：3

相关论文

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[1] DEFECT REDUCTION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING DIFFERENT SUPERLATTICE STRUCTURES
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[7] CHARACTERIZATION OF EPITAXIALLY GROWN GAAS ON SI SUBSTRATES WITH III-V COMPOUNDS INTERMEDIATE LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[8] DEFECT REDUCTION IN GAAS EPITAXIAL LAYERS USING A GAASP-INGAAS STRAINED-LAYER SUPERLATTICE
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