DEFECT REDUCTION IN GAAS EPITAXIAL LAYERS USING A GAASP-INGAAS STRAINED-LAYER SUPERLATTICE

被引：48

作者：

TISCHLER, MA

KATSUYAMA, T

ELMASRY, NA

BEDAIR, SM

机构：

[1] North Carolina State Univ,, Electrical & Computer, Engineering Dep, Raleigh, NC, USA, North Carolina State Univ, Electrical & Computer Engineering Dep, Raleigh, NC, USA

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.95663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：294 / 296

页数：3

共 21 条

[1] A NEW GAASP-INGAAS STRAINED-LAYER SUPER-LATTICE LIGHT-EMITTING DIODE [J].

BEDAIR, SM ;

KATSUYAMA, T ;

TIMMONS, M ;

TISCHLER, MA .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :45-47

[2] GAASP-GAINASSB SUPERLATTICES - A NEW STRUCTURE FOR ELECTRONIC DEVICES [J].

BEDAIR, SM ;

KATSUYAMA, T ;

CHIANG, PK ;

ELMASRY, NA ;

TISCHLER, M ;

TIMMONS, M .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :477-482

[3] PHOTO-LUMINESCENCE AT DISLOCATIONS IN GAAS AND INP [J].

BOHM, K ;

FISCHER, B .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5453-5460

[4] PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J].

HEINKE, W ;

QUEISSER, HJ .

PHYSICAL REVIEW LETTERS, 1974, 33 (18) :1082-1084

[5] THE INFLUENCE OF DISLOCATION DENSITY ON THE UNIFORMITY OF ELECTRICAL-PROPERTIES OF SI IMPLANTED, SEMI-INSULATING LEC-GAAS [J].

HONDA, T ;

ISHII, Y ;

MIYAZAWA, S ;

YAMAZAKI, H ;

NANISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (05) :L270-L272

[6] CHARACTERIZATION OF THIN ACTIVE LAYER ON SEMI-INSULATING GAAS BY MAPPING OF FET ARRAY PERFORMANCE [J].

ISHII, Y ;

MIYAZAWA, S ;

ISHIDA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1051-1056

[7] THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFETS FABRICATED ON LEC-GROWN SEMI-INSULATING SUBSTRATES [J].

ISHII, Y ;

MIYAZAWA, S ;

ISHIDA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :800-804

[8] UNIFORMITY EVALUATION OF MESFETS FOR GAAS LSI FABRICATION [J].

MATSUOKA, Y ;

OHWADA, K ;

HIRAYAMA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1062-1067

[9] USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS [J].

MATTHEWS, JW ;

BLAKESLEE, AE ;

MADER, S .

THIN SOLID FILMS, 1976, 33 (02) :253-266

[10]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/S0022-0248(74)80055-2

← 1 2 3 →