GAASP-GAINASSB SUPERLATTICES - A NEW STRUCTURE FOR ELECTRONIC DEVICES

[1] GROWTH OF GAAS(1-X)SBX BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) : 959 - 972

[2] A NEW GAASP-INGAAS STRAINED-LAYER SUPER-LATTICE LIGHT-EMITTING DIODE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 45 - 47

[3] BEDAIR SM, UNPUB

[4] BEDAIR SM, 1983, ELECTRONIC MATERIALS

[5] SEMIMETALLIC INAS-GASB SUPER-LATTICES TO THE HETEROJUNCTION LIMIT [J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 30 - 32

[6] FAURIE JP, 1979, APPL PHYS LETT, V34, P663

[7] FRITZ IJ, 1982, P INT S GAAS RELATED, P241

[8] GLISSON TH, 1978, J ELECTRON MATER, V1, P1

[9] KIM MK, 1982, ELECTRONIC MATERIALS

[10] DISORDER OF AN INXGA1-XAS-GAAS SUPER-LATTICE BY ZN DIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6382 - 6384

[1] GROWTH OF GAAS(1-X)SBX BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) : 959 - 972

[2] A NEW GAASP-INGAAS STRAINED-LAYER SUPER-LATTICE LIGHT-EMITTING DIODE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 45 - 47

[3] BEDAIR SM, UNPUB

[4] BEDAIR SM, 1983, ELECTRONIC MATERIALS

[5] SEMIMETALLIC INAS-GASB SUPER-LATTICES TO THE HETEROJUNCTION LIMIT [J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 30 - 32

[6] FAURIE JP, 1979, APPL PHYS LETT, V34, P663

[7] FRITZ IJ, 1982, P INT S GAAS RELATED, P241

[8] GLISSON TH, 1978, J ELECTRON MATER, V1, P1

[9] KIM MK, 1982, ELECTRONIC MATERIALS

[10] DISORDER OF AN INXGA1-XAS-GAAS SUPER-LATTICE BY ZN DIFFUSION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6382 - 6384