CHARACTERIZATION OF THIN ACTIVE LAYER ON SEMI-INSULATING GAAS BY MAPPING OF FET ARRAY PERFORMANCE

被引：13

作者：

ISHII, Y

MIYAZAWA, S

ISHIDA, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 08期

关键词：

D O I：

10.1109/T-ED.1984.21659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1051 / 1056

页数：6

共 12 条

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[8] DISLOCATIONS AS THE ORIGIN OF THRESHOLD VOLTAGE SCATTERINGS FOR GAAS-MESFET ON LEC-GROWN SEMI-INSULATING GAAS SUBSTRATE [J].

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ISHII, Y .

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[9] IMPROVEMENT OF CRYSTAL HOMOGENEITIES IN LIQUID-ENCAPSULATED CZOCHRALSKI GROWN, SEMI-INSULATING GAAS BY HEAT-TREATMENT [J].

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[10] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].

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APPLIED PHYSICS LETTERS, 1983, 43 (09) :853-855

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