IMPROVEMENT OF CRYSTAL HOMOGENEITIES IN LIQUID-ENCAPSULATED CZOCHRALSKI GROWN, SEMI-INSULATING GAAS BY HEAT-TREATMENT

被引：60

作者：

MIYAZAWA, S

HONDA, T

ISHII, Y

ISHIDA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 04期

关键词：

D O I：

10.1063/1.94792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：410 / 412

页数：3

共 17 条

[1]

ASAI K, 1983, ISSCC DIG TECH PAP I, V26, P46

[2]

BLUNT RT, 1982, IEEE T ELECTRON DEV, V29, P1039

[3]

BONNET M, 1982, 1982 GAAS IC S NEW O, P54

[4] DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS [J].

BROZEL, MR ;

GRANT, I ;

WARE, RM ;

STIRLAND, DJ .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :610-612

[5] INVESTIGATION OF INHOMOGENEITIES IN GAAS BY ELECTRON-BEAM EXCITATION [J].

CASEY, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :153-+

[6] DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

CHEN, RT ;

HOLMES, DE .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) :111-124

[7] PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J].

HEINKE, W ;

QUEISSER, HJ .

PHYSICAL REVIEW LETTERS, 1974, 33 (18) :1082-1084

[8] THE INFLUENCE OF DISLOCATION DENSITY ON THE UNIFORMITY OF ELECTRICAL-PROPERTIES OF SI IMPLANTED, SEMI-INSULATING LEC-GAAS [J].

HONDA, T ;

ISHII, Y ;

MIYAZAWA, S ;

YAMAZAKI, H ;

NANISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (05) :L270-L272

[9]

ISHII Y, UNPUB

[10] ROLE OF DISLOCATIONS IN SEMI-INSULATION MECHANISM IN UNDOPED LEC GAAS CRYSTAL [J].

KAMEJIMA, T ;

SHIMURA, F ;

MATSUMOTO, Y ;

WATANABE, H ;

MATSUI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11) :L721-L723

← 1 2 →