UNIFORMITY EVALUATION OF MESFETS FOR GAAS LSI FABRICATION

被引：18

作者：

MATSUOKA, Y

OHWADA, K

HIRAYAMA, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 08期

关键词：

D O I：

10.1109/T-ED.1984.21661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1062 / 1067

页数：6

共 15 条

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[2]

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[3]

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :800-804

[5] ELECTRON-BEAM LITHOGRAPHY IN N+ SELF-ALIGNED GAAS-MESFET FABRICATION [J].

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[6]

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[7] DISLOCATIONS AS THE ORIGIN OF THRESHOLD VOLTAGE SCATTERINGS FOR GAAS-MESFET ON LEC-GROWN SEMI-INSULATING GAAS SUBSTRATE [J].

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ISHII, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1057-1062

[8] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].

MIYAZAWA, S ;

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[9]

MIYAZAWA S, 1982, JPN J APPL PHYS, V22, P419

[10] INHOMOGENEOUS GAAS-FET THRESHOLD VOLTAGES RELATED TO DISLOCATION DISTRIBUTION [J].

NANISHI, Y ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06) :L335-L337

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