ELECTRON-MICROSCOPE STUDIES OF INTERDIFFUSION IN MOLECULAR-BEAM EPITAXY GROWN GAINAS/ALINAS MULTILAYERS

被引：10

作者：

MALLARD, RE ^{[1
]}

LONG, NJ ^{[1
]}

BOOKER, GR ^{[1
]}

SCOTT, EG ^{[1
]}

HOCKLY, M ^{[1
]}

TAYLOR, M ^{[1
]}

机构：

[1] BRITISH TELECOMMUN PLC,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 01期

关键词：

D O I：

10.1063/1.350376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal interdiffusion behavior of intrinsic nominally lattice-matched GaInAs/AlInAs heterostructures grown by molecular-beam epitaxy, studied using electron microscopy, is reported. At temperatures as low as 700-degrees-C, significant degrees of interdiffusion are observed. X-ray microanalysis of the multilayers reveals that the interdiffusion takes place along a nonlinear (that is, non-lattice-matched) path. This behavior has previously been attributed to the pronounced differences in the elemental diffusivities of the constituent binary compounds. In addition, high-resolution electron microscopy (HREM) was used to determine the detailed interfacial structure of the material. Such a determination is only possible under favorable and well-defined experimental conditions. The accuracy and limitations of HREM analysis of interfacial abruptness in semiconductor interfaces are commented on.

引用

页码：182 / 192

页数：11

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