INDIUM DIFFUSION IN THE CHEMICAL-POTENTIAL GRADIENT AT AN IN0.53GA0.47AS/IN0.52AL0.48AS INTERFACE

被引:32
作者
BAIRD, RJ [1 ]
POTTER, TJ [1 ]
KOTHIYAL, GP [1 ]
BHATTACHARYA, PK [1 ]
机构
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109
关键词
D O I
10.1063/1.99579
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2055 / 2057
页数:3
相关论文
共 7 条
[1]   INTERDIFFUSION BETWEEN GAAS AND ALAS [J].
CHANG, LL ;
KOMA, A .
APPLIED PHYSICS LETTERS, 1976, 29 (03) :138-141
[2]  
CRANK J, 1976, MATH DIFFUSION, P14
[3]  
DARKEN LS, 1949, T AM I MIN MET ENG, V180, P430
[4]  
DARKEN LS, 1953, PHYSICAL CHEM METALS, P461
[5]   DIFFUSION IN COMPOUND SEMICONDUCTORS [J].
GOLDSTEIN, B .
PHYSICAL REVIEW, 1961, 121 (05) :1305-&
[6]   A COMPARISON OF SPUTTERED NI/CR INTERFACE DEPTH RESOLUTION AS OBTAINED BY THE QUARTZ CRYSTAL MICROBALANCE MASS-LOSS METHOD AND AUGER-SPECTROSCOPY [J].
NAVINSEK, B ;
PANJAN, P ;
ZABKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1985, 3 (03) :671-673
[7]   INTERDIFFUSION AND WAVELENGTH MODIFICATION IN IN0.53GA0.47AS/IN0.52AL0.48AS QUANTUM-WELLS BY LAMP ANNEALING [J].
SEO, KS ;
BHATTACHARYA, PK ;
KOTHIYAL, GP ;
HONG, S .
APPLIED PHYSICS LETTERS, 1986, 49 (15) :966-968