A COMPARISON OF SPUTTERED NI/CR INTERFACE DEPTH RESOLUTION AS OBTAINED BY THE QUARTZ CRYSTAL MICROBALANCE MASS-LOSS METHOD AND AUGER-SPECTROSCOPY

被引：4

作者：

NAVINSEK, B ^{[1
]}

PANJAN, P ^{[1
]}

ZABKAR, A ^{[1
]}

机构：

[1] NBS, DIV SURFACE SCI, GAITHERSBURG, MD 20899 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573277

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：671 / 673

页数：3

共 10 条

[1] HEAVY-ION SPUTTERING YIELD OF SILICON [J].

ANDERSEN, HH ;

BAY, HL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :1919-1921

[2] NI/CR INTERFACE WIDTH DEPENDENCE ON SPUTTERED DEPTH [J].

DAVARYA, F ;

ROUSH, ML ;

FINE, J ;

ANDREADIS, TD ;

GOKTEPE, OF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :467-470

[3]

FINE J, J VAC SCI TECHNOL

[4]

FINE J, 1985, J VAC SCI A, V3

[5]

FINE J, 1980, PHYSICS IONIZED GASE, P379

[6] NEW METHOD FOR MEASURING SPUTTERING IN REGION NEAR THRESHOLD [J].

MCKEOWN, D .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (02) :133-&

[7] DETERMINATION OF SPUTTERING YIELDS BY A NEW PROCEDURE FOR DEPTH PROFILING OF MULTILAYERED STRUCTURES [J].

NAVINSEK, B ;

PANJAN, P ;

ZABKAR, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3) :670-673

[8]

NISSE EPE, 1971, J APPL PHYS, V42, P480

[9]

PANJAN P, 1984, PHYSICS IONIZED GASE, P321

[10] BEAM-INDUCED BROADENING EFFECTS IN SPUTTER DEPTH PROFILING [J].

WITTMAACK, K .

VACUUM, 1984, 34 (1-2) :119-137

← 1 →