BEAM-INDUCED BROADENING EFFECTS IN SPUTTER DEPTH PROFILING

[1] Andersen H. H., 1970, Radiation Effects, V3, P51, DOI 10.1080/00337577008235616

[2] Andersen H. H., 1981, Sputtering by particle bombardment I. Physical sputtering of single-element solids, P145

[3] Andersen H. H., 1971, Radiation Effects, V7, P179, DOI 10.1080/00337577108230986

[4] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[5] ANDERSEN HH, 1980, PHYSICS IONIZED GASE

[6] ANDERSEN N, 1974, MAT FYS MEDD DAN VID, V39

[7] BENNINGH.A, 1969, Z ANGEW PHYSIK, V27, P51

[8] COMPARATIVE STUDY OF SI(111), SILICON-OXIDE, SIC AND SI3N4 SURFACES BY SECONDARY ION MASS-SPECTROSCOPY (SIMS) [J]. THIN SOLID FILMS, 1975, 28 (01) : 59 - 64

[9] Bernheim M., 1973, International Journal of Mass Spectrometry and Ion Physics, V12, P93, DOI 10.1016/0020-7381(73)80090-7

[10] CHANGES IN THE SURFACE-COMPOSITION OF AG-PD, AU-PD AND CU-PD ALLOYS UNDER ION-BOMBARDMENT [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 541 - 545

[1] Andersen H. H., 1970, Radiation Effects, V3, P51, DOI 10.1080/00337577008235616

[2] Andersen H. H., 1981, Sputtering by particle bombardment I. Physical sputtering of single-element solids, P145

[3] Andersen H. H., 1971, Radiation Effects, V7, P179, DOI 10.1080/00337577108230986

[4] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[5] ANDERSEN HH, 1980, PHYSICS IONIZED GASE

[6] ANDERSEN N, 1974, MAT FYS MEDD DAN VID, V39

[7] BENNINGH.A, 1969, Z ANGEW PHYSIK, V27, P51

[8] COMPARATIVE STUDY OF SI(111), SILICON-OXIDE, SIC AND SI3N4 SURFACES BY SECONDARY ION MASS-SPECTROSCOPY (SIMS) [J]. THIN SOLID FILMS, 1975, 28 (01) : 59 - 64

[9] Bernheim M., 1973, International Journal of Mass Spectrometry and Ion Physics, V12, P93, DOI 10.1016/0020-7381(73)80090-7

[10] CHANGES IN THE SURFACE-COMPOSITION OF AG-PD, AU-PD AND CU-PD ALLOYS UNDER ION-BOMBARDMENT [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 541 - 545