COMPARATIVE STUDY OF SI(111), SILICON-OXIDE, SIC AND SI3N4 SURFACES BY SECONDARY ION MASS-SPECTROSCOPY (SIMS)

被引：50

作者：

BENNINGHOVEN, A ^{[1
]}

SICHTERMANN, W ^{[1
]}

STORP, S ^{[1
]}

机构：

[1] UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER

来源：

THIN SOLID FILMS | 1975年 / 28卷 / 01期

关键词：

D O I：

10.1016/0040-6090(75)90275-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：59 / 64

页数：6

相关论文

共 14 条

[1] STUDY OF SILICON-OXYGEN INTERACTION WITH STATICAL METHOD OF SECONDARY ION MASS SPECTROSCOPY (SIMS)
BENNINGHOVEN, A
STORP, S
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (04) : 170 - 171
[2] BESKE H, 1961, COMMUNICATION
[3] BLANCHARD B, 1970, SURFACE SCI, V19, P45
[4] CHANG CC, 1970, SURFACE SCI, V23, P293
[5] CHARIG JM, 1969, SURFACE SCI, V15, P293
[6] IDENTIFICATION OF FORM OF CARBON AT A SI(100) SURFACE USING AUGER ELECTRON SPECTROSCOPY
GRANT, JT
HAAS, TW
[J]. PHYSICS LETTERS A, 1970, A 33 (06) : 386 - &
[7] AUGER ELECTRON SPECTROSCOPY OF SI
GRANT, JT
HAAS, TW
[J]. SURFACE SCIENCE, 1970, 23 (02) : 347 - &
[8] LEED EVIDENCE FOR CARBON CONTAMINATION OF SI(311) SURFACE
HECKINGB.R
WOOD, PR
[J]. SURFACE SCIENCE, 1970, 23 (02) : 437 - &
[9] CARBIDE CONTAMINATION OF SILICON SURFACES
HENDERSON, RC
MARCUS, RB
POLITO, WJ
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1208 - +
[10] HONIG RE, 1961, 5TH P INT C ION PHEN