STUDY OF SILICON-OXYGEN INTERACTION WITH STATICAL METHOD OF SECONDARY ION MASS SPECTROSCOPY (SIMS)

被引：31

作者：

BENNINGHOVEN, A ^{[1
]}

STORP, S ^{[1
]}

机构：

[1] UNIV COLOGNE, PHYS INST 1, COLOGNE 5000, WEST GERMANY

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 04期

关键词：

D O I：

10.1063/1.1654599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：170 / 171

页数：2

共 9 条

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[2] OBSERVATION ON SURFACE-REACTIONS WITH STATIC METHOD OF SECONDARY ION MASS-SPECTROMETRY .1. METHOD [J].

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SURFACE SCIENCE, 1973, 35 (01) :427-457

[4] INVESTIGATION OF SURFACE OXIDATION OF METALS IN SUB-MONOLAYER AND MONOLAYER RANGE WITH STATIC METHOD OF SECONDARY ION MASS-SPECTROMETRY [J].

BENNINGHOVEN, A ;

MULLER, A .

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[6] INVESTIGATION OF SILICON-OXYGEN INTERACTIONS USING AUGER ELECTRON SPECTROSCOPY [J].

JOYCE, BA ;

NEAVE, JH .

SURFACE SCIENCE, 1971, 27 (03) :499-&

[7]

JOYCE BA, TO BE PUBLISHED

[8] COMBINED AUGER-ELECTRON SPECTROSCOPY AND ELECTRON-IMPACT DESORPTION STUDIES OF SILICON SURFACES [J].

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MUROTANI, T .

SURFACE SCIENCE, 1972, 32 (02) :459-&

[9] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J].

SCHLIER, RE ;

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JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) :917-926

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