INTERDIFFUSION AND WAVELENGTH MODIFICATION IN IN0.53GA0.47AS/IN0.52AL0.48AS QUANTUM-WELLS BY LAMP ANNEALING

被引：22

作者：

SEO, KS

BHATTACHARYA, PK

KOTHIYAL, GP

HONG, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 15期

关键词：

D O I：

10.1063/1.97497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：966 / 968

页数：3

共 13 条

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[7] PREPARATION OF (ALXGA1-X)YIN1-YAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.5,Y = 0.47) LATTICE MATCHED TO INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

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[8] THERMAL-ANNEAL WAVELENGTH MODIFICATION OF MULTIPLE-WELL P-N ALXGA1-X AS-GAAS QUANTUM-WELL LASERS [J].

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[9] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP [J].

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[10] ELECTROREFLECTANCE INVESTIGATION OF (GA1-XALX)0.47IN0.53AS LATTICE MATCHED TO INP [J].

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APPLIED PHYSICS LETTERS, 1983, 43 (01) :109-111

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