THERMAL-ANNEAL WAVELENGTH MODIFICATION OF MULTIPLE-WELL P-N ALXGA1-X AS-GAAS QUANTUM-WELL LASERS

被引：25

作者：

MEEHAN, K

BROWN, JM

GAVRILOVIC, P

HOLONYAK, N

BURNHAM, RD

PAOLI, TL

STREIFER, W

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 07期

关键词：

D O I：

10.1063/1.333277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2672 / 2675

页数：4

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[6] WAVELENGTH MODIFICATION (DELTA-H-OMEGA = 10-40 MEV) OF ROOM-TEMPERATURE CONTINUOUS QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES BY THERMAL ANNEALING
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