WAVELENGTH MODIFICATION (DELTA-H-OMEGA = 10-40 MEV) OF ROOM-TEMPERATURE CONTINUOUS QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES BY THERMAL ANNEALING

被引：18

作者：

MEEHAN, K

HOLONYAK, N

BURNHAM, RD

PAOLI, TL

STREIFER, W

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.331957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7190 / 7191

页数：2

共 7 条

[1] LOW THRESHOLD PHOTOPUMPED ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

HOLONYAK, N ;

HESS, K ;

CAMRAS, MD .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2618-2622

[2] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BURNHAM, RD ;

SCIFRES, DR ;

STREIFER, W .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :228-230

[3] WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION [J].

CAMRAS, MD ;

HOLONYAK, N ;

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

PAOLI, TL ;

LINDSTROM, C .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5637-5641

[4] PHOTOPUMPED LOW THRESHOLD ALX'GA1-X'AS-ALX'GA1-X'AS-ALXGA1-XAS(X'-APPROXIMATELY-0.85,X'-APPROXIMATELY-0.3,X=0) SINGLE QUANTUM WELL LASERS [J].

CAMRAS, MD ;

HOLONYAK, N ;

NIXON, MA ;

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

PAOLI, TL ;

LINDSTROM, C .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :761-763

[5]

CAMRAS MD, 1983, 1982 INT S GAAS REL, P233

[6] INTERDIFFUSION BETWEEN GAAS AND ALAS [J].

CHANG, LL ;

KOMA, A .

APPLIED PHYSICS LETTERS, 1976, 29 (03) :138-141

[7]

DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

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