GALLIUM-ARSENIDE TRANSFERRED-ELECTRON DEVICES BY LOW-LEVEL ION-IMPLANTATION

被引:3
作者
ANDERSON, WT
DIETRICH, HB
SWIGGARD, EW
LEE, SH
BARK, ML
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10.1063/1.328067
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O59 [应用物理学];
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页码:3175 / 3177
页数:3
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  • [1] GIBBONS JF, 1975, PROJECTED RANGE STAT
  • [2] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS
    HUBER, AM
    LINH, NT
    VALLADON, M
    DEBRUN, JL
    MARTIN, GM
    MITONNEAU, A
    MIRCEA, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4022 - 4026
  • [3] MILLS TG, 1979, Patent No. 4155784
  • [4] GAAS PLANAR GUNN DIGITAL DEVICES BY SULFUR-ION-IMPLANTATION
    MIZUTANI, T
    KURUMADA, K
    [J]. ELECTRONICS LETTERS, 1975, 11 (25-2) : 638 - 639
  • [5] SCHOTTKY-GATE BULK EFFECT DIGITAL DEVICES
    SUGETA, T
    YANAI, H
    SEKIDO, K
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (11): : 1629 - &
  • [6] Swiggard E. M., 1979, Gallium Arsenide and Related Compounds 1978, P125
  • [7] SWIGGARD EM, 1977, GALLIUM ARSENIDE REL, P23
  • [8] TICHAUER LM, 1978, TECHNICAL DIGEST, P294