GALLIUM-ARSENIDE TRANSFERRED-ELECTRON DEVICES BY LOW-LEVEL ION-IMPLANTATION

[1] GIBBONS JF, 1975, PROJECTED RANGE STAT

[2] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4022 - 4026

[3] MILLS TG, 1979, Patent No. 4155784

[4] GAAS PLANAR GUNN DIGITAL DEVICES BY SULFUR-ION-IMPLANTATION [J]. ELECTRONICS LETTERS, 1975, 11 (25-2) : 638 - 639

[5] SCHOTTKY-GATE BULK EFFECT DIGITAL DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (11): : 1629 - &

[6] Swiggard E. M., 1979, Gallium Arsenide and Related Compounds 1978, P125

[7] SWIGGARD EM, 1977, GALLIUM ARSENIDE REL, P23

[8] TICHAUER LM, 1978, TECHNICAL DIGEST, P294

[1] GIBBONS JF, 1975, PROJECTED RANGE STAT

[2] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4022 - 4026

[3] MILLS TG, 1979, Patent No. 4155784

[4] GAAS PLANAR GUNN DIGITAL DEVICES BY SULFUR-ION-IMPLANTATION [J]. ELECTRONICS LETTERS, 1975, 11 (25-2) : 638 - 639

[5] SCHOTTKY-GATE BULK EFFECT DIGITAL DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (11): : 1629 - &

[6] Swiggard E. M., 1979, Gallium Arsenide and Related Compounds 1978, P125

[7] SWIGGARD EM, 1977, GALLIUM ARSENIDE REL, P23

[8] TICHAUER LM, 1978, TECHNICAL DIGEST, P294