SPECTRAL SIGNATURE OF RELAXATION OSCILLATIONS IN SEMICONDUCTOR-LASERS

A new and relatively simple expression is given for the optical spectrum of a single-mode semiconductor laser which, due to the presence of relaxation oscillations, consists of a strong central line with a broad weak sideband at each side. The coupling between phase and amplitude fluctuations is included in this derivation and is shown to result in an asymmetry between the relaxation oscillation sidebands. This asymmetry can be used to determine the linewidth enhancement factor-alpha. Using optical heterodyne detection we have accurately measured the spectrum of a Fabry-Perot-type AlGaAs laser as a function of output power. Information on the dynamics of the relaxation oscillations was thus obtained. The power dependence of the frequency and damping of the relaxation oscillations allowed us to separately determine the spontaneous lifetime and the dependence of the gain on both carrier density (differential gain) and intensity (gain saturation).