DIAGNOSTICS OF ASYMMETRICALLY COATED SEMICONDUCTOR-LASERS

被引：7

作者：

HAMEL, WA ^{[1
]}

BABELIOWSKY, M ^{[1
]}

WOERDMAN, JP ^{[1
]}

ACKET, GA ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 07期

关键词：

D O I：

10.1109/68.87926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Asymmetrically coated semiconductor lasers (i.e., R1 not-equal R2) are increasingly used in, for example, high-power lasers. We present a simple diagnostic procedure that allows the determination of a number of parameters of such lasers, including the facet reflectivities R1 and R2.

引用

页码：600 / 602

页数：3

共 8 条

[1] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].