SPATIALLY DISTRIBUTED GAINS IN SEMICONDUCTOR-LASERS

被引:5
作者
LEGRAND, Y
LEFLOCH, A
机构
关键词
D O I
10.1063/1.101321
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1607 / 1609
页数:3
相关论文
共 22 条
[1]  
DUTARTRE N, 1963, THESIS U PARIS
[2]   GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS SINGLE QUANTUM WELL LASERS [J].
DUTTA, NK ;
HARTMAN, RL ;
TSANG, WT .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) :1243-1246
[3]   GAIN MEASUREMENTS IN INGAASP MULTIQUANTUM WELL LASERS [J].
DUTTA, NK ;
CRAFT, DC ;
NAPHOLTZ, SG .
APPLIED PHYSICS LETTERS, 1985, 46 (02) :123-125
[4]  
GHAFOORISHIRAZ H, 1988, IEEE J LIGHTWAVE TEC, V6, P500
[5]   CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119
[6]   GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306
[7]   POLARIZATION-DEPENDENT GAIN-CURRENT RELATIONSHIP IN (111)-ORIENTED GAAS/ALGAAS QUANTUM-WELL LASERS [J].
HAYAKAWA, T ;
SUYAMA, T ;
TAKAHASHI, K ;
KONDO, M ;
YAMAOTO, S ;
HIJIKATA, T .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) :297-302
[8]  
HEARD HG, 1968, LASER PARAMETER MEAS, P212
[9]   ATOMES A IINTERIEUR DUN INTERFEROMETRE PEROT-FABRY [J].
KASTLER, A .
APPLIED OPTICS, 1962, 1 (01) :17-24
[10]   LOW THRESHOLD CURRENT GAAS/GAALAS GRIN-SCH STRIPE LASERS GROWN BY OMVPE [J].
KRAKOWSKI, M ;
HIRTZ, P ;
BLONDEAU, R ;
HERSEE, SD ;
BALDY, M ;
DECREMOUX, B ;
DUCHEMIN, JP .
ELECTRONICS LETTERS, 1983, 19 (25-2) :1082-1084