DETERMINATION OF INVERSION TEMPERATURE OF SB2O3-DOPED BATIO3 POSITIVE TEMPERATURE-COEFFICIENT OF RESISTIVITY (PTCR) CERAMICS BY THE FINITE-DIFFERENCE METHOD

被引：4

作者：

KIM, HS ^{[1
]}

SUNG, GY ^{[1
]}

KIM, CH ^{[1
]}

机构：

[1] ELECTR & TELECOMMUN RES INST, TAEJON, SOUTH KOREA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1992年 / 75卷 / 03期

关键词：

D O I：

10.1111/j.1151-2916.1992.tb07847.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of the cooling rate on the PTCR (positive temperature coefficient of resistivity) characteristics of 0.1 mol% Sb2O3-doped BaTiO3 ceramics has been investigated. Resistances both below and above the Curie temperature were increased by slow cooling, which indicated that the resistive layer width at the grain boundary increased as the cooling rate decreased. Concentration profiles of the Ba vacancies as a function of distance from the grain boundary have been simulated by the finite difference method. The inversion temperature of the 0.1 mol% Sb2O3-doped BaTiO3 system was determined to be 1160-degrees-C from the measured electrical properties and computed concentration profiles.

引用

页码：587 / 591

页数：5

共 12 条

[1] THE EFFECT OF ANNEALING ON THE CHARACTERISTICS OF SEMICONDUCTING BATIO3 POSITIVE TEMPERATURE-COEFFICIENT OF RESISTANCE DEVICES [J].