A TECHNIQUE FOR OBTAINING THE INFRARED REFLECTIVITY OF BACK SIDE-DAMAGED SILICON SAMPLES

被引：6

作者：

ENGELBRECHT, JAA

机构：

[1] Department of Physics, University of Port Elizabeth

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 01期

关键词：

D O I：

10.1149/1.2086387

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Various expressions have been proposed for the determination of the oxygen content in silicon wafers with damaged back sides. In most cases, the reflectivity of the sample surfaces must be established. A simple technique is proposed which enables the determination of the reflectivity from a single transmission measurement. The technique and the proposed expressions are evaluated against standards of known concentration. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：300 / 303

页数：4

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